2024 : 11 : 23
فارسی
Ali Naderi

Ali Naderi

Academic rank: Associate Professor
ORCID:
Education: PhD.
ScopusId:
HIndex:
Faculty: Faculty ofٍٍ Electrical Engineering
Address: Kermanshah university of technology, Imam Komeini BLVD, Kermanshah city
Phone: 08338305008
Home

Research activities

Journal Papers
Digital Hardware Implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley Neuron Models With High Accuracy and Low Resources Milad Ghanbarpour, Ali Naderi, Behzad Ghanbari, Saeed haghiri, Arash Ahmadi (2023)
Efficient Digital Realization of Endocrine Pancreatic β-Cells Milad Ghanbarpour, Ali Naderi, Saeed haghiri, Behzad Ghanbari, Arash Ahmadi (2023)
A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region amir abdi, Ali Naderi (2022)
Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances Elham Farahzad, Ali Naderi (2022)
Implementation of Cardiac Purkinje Fiber Cells Model: High Speed and Low Cost Hardware Mahsa Salimi Mansouri, Ali Naderi, Behzad Ghanbari (2022)
An Efficient Digital Realization of Retinal Light Adaptation in Cone Photoreceptors Milad Ghanbarpour, Ali Naderi, Saeed haghiri, Arash Ahmadi (2021)
DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells sasan khanjar, Ali Naderi (2021)
Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance Ali Naderi, Hamed Mohammadi (2021)
Proposal of a doping-less tunneling carbon nanotube field-effect transistor Maryam Ghodrati, Ali Mir, Ali Naderi (2021)
High Speed and Low Digital Resources Implementation of Hodgkin-Huxley Neuronal Model Using Base-2 Functions Saeed haghiri, Ali Naderi, Behzad Ghanbari, Arash Ahmadi (2021)
Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field Zahra Aghaeipour, Ali Naderi (2020)
Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX Behrooz Abdi Tahne, Ali Naderi, fateme heirani (2020)
New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern Maryam Ghodrati, Ali Mir, Ali Naderi (2020)
The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor Ali Naderi, Maryam Ghodrati, Sobhi Baniardalani (2020)
Multiplierless Implementation of Noisy Izhikevich Neuron With Low-Cost Digital Design Saeed haghiri, Abdulhamid Zahedi, Ali Naderi, Arash Ahmadi (2018)
SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics Ali Naderi, kamran moradi satari, fateme heirani (2018)
An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region Ali Naderi, Maryam Ghodrati (2018)
High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region Ali Naderi, Hamed Mohammadi (2018)
A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide Ali Naderi, fateme heirani (2018)
"Cut Off Frequency Variation by Ambient Heating in Tunneling p-i-n CNTFETs" Ali Naderi, Maryam Ghodrati (2018)
Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region Ali Naderi (2018)
A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications Hamed Mohammadi, Ali Naderi (2018)
Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region Ali Naderi, Maryam Ghodrati (2017)
Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics Ali Naderi, fateme heirani (2017)
and bending engineering in p-i-n gate all around Carbon nanotube feld effect transistors by multi-segment gate Ali Naderi, Behrooz Abdi Tahne (2017)
Higher Current Ratio and Improved Ambipolar Behavior in Graphene Nanoribbon Field Effect Transistors by Symmetric Pocket Doping Profile Ali Naderi (2016)
Review—Methods in Improving the Performance of Carbon Nanotube Field Effect Transistors Ali Naderi, Behrooz Abdi Tahne (2016)
SLD-MOSCNT: A new MOSCNT with step{linear doping pro_le in the source and drain regions Behrooz Abdi Tahne, Ali Naderi (2016)
Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region Ali Naderi (2016)
T-CNTFET with Gate-Drain Overlap and Two Different Gate Metals: A Novel Structure with Increased Saturation Current Ali Naderi, Behrooz Abdi Tahne (2016)
Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study Ali Naderi, Seyed Abolfazl Ahmadmiriz (2016)
Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region Ali Naderi (2016)
Theoretical analysis of a novel dual gate metal-graphene nanoribbon field effect transistor Ali Naderi (2015)
Electrically activated source extension grapheme nanoribbon field effect transistor : noval attributes and design considerations for suppressing short channel effects Ali Naderi, Parviz Keshavarzi (2014)
Numerical Study of carbon nanotube field effect transistors in presence of carbon-carbon third nearest neighbor interactions Ali Naderi (2014)
Conference Papers
Powered By Jiro