Ali Naderi

Digital Hardware Implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley Neuron Models With High Accuracy and Low Resources Milad Ghanbarpour, Ali Naderi, Behzad Ghanbari, Saeed haghiri, Arash Ahmadi (2023)

A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region amir abdi, Ali Naderi (2022)

Implementation of Cardiac Purkinje Fiber Cells Model: High Speed and Low Cost Hardware Mahsa Salimi Mansouri, Ali Naderi, Behzad Ghanbari (2022)

DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells sasan khanjar, Ali Naderi (2021)

Proposal of a doping-less tunneling carbon nanotube field-effect transistor Maryam Ghodrati, Ali Mir, Ali Naderi (2021) Materials Science and Engineering B-Advanced Functional Solid-State Materials: 265; 115016-...

Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field Zahra Aghaeipour, Ali Naderi (2020) Silicon: 12; 2611-2618

Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX Behrooz Abdi Tahne, Ali Naderi, fateme heirani (2020) Silicon: 12; 975-986

Multiplierless Implementation of Noisy Izhikevich Neuron With Low-Cost Digital Design Saeed haghiri, Abdulhamid Zahedi, Ali Naderi, Arash Ahmadi (2018) IEEE Transactions on Biomedical Circuits and Systems: 12; 1422-1430

An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region Ali Naderi, Maryam Ghodrati (2018) Turkish Journal of Electrical Engineering and Computer Sciences: 26; 2335 – 2346

A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide Ali Naderi, fateme heirani (2018)

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region Ali Naderi (2018)

Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region Ali Naderi, Maryam Ghodrati (2017)

and bending engineering in p-i-n gate all around Carbon nanotube feld effect transistors by multi-segment gate Ali Naderi, Behrooz Abdi Tahne (2017) international journal of nano dimension: 8; 341-350

Review—Methods in Improving the Performance of Carbon Nanotube Field Effect Transistors Ali Naderi, Behrooz Abdi Tahne (2016)

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region Ali Naderi (2016)

Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study Ali Naderi, Seyed Abolfazl Ahmadmiriz (2016)

Theoretical analysis of a novel dual gate metal-graphene nanoribbon field effect transistor Ali Naderi (2015)

Numerical Study of carbon nanotube field effect transistors in presence of carbon-carbon third nearest neighbor interactions Ali Naderi (2014)