In this paper, a new structure, step{linear doping MOSCNT (SLD-MOSCNT), is pro- posed to improve the performance of basic MOSCNTs. The basic structure su_ers from band to band tunneling (BTBT). We show that using SLD pro_le for source and drain regions increases the horizontal distance between valence and conduction bands at gate to source/drain junction which reduces BTBT probability. SLD performance is compared with other similar structures which have recently been proposed to reduce BTBT such as MOSCNT with lightly-doped drain and source (LDDS), and with double-light doping in source and drain regions (DLD). The obtained results using a nonequilib- rium Green's function (NEGF) method show that the SLD-MOSCNT has the lowest leakage current, power consumption and delay time, and the highest current ratio and voltage gain. The ambipolar conduction in the proposed structure is very low and can be neglected. In addition, these structures can improve short-channel e_ects. Also, the investigation of cuto_ frequency of the di_erent structures shows that the SLD has the highest cuto_ frequency. Device performance has been investigated for gate length from 8 to 20 nm which demonstrates all discussions regarding the superiority of the proposed structure are also valid for di_erent channel lengths. This improvement is more signi_cant especially for channel length less than 12 nm. Therefore, the SLD can be considered as a candidate to be used in the applications with high speed and low power consumption.
