In here, a new structure based on doping less tunneling CNTFET is introduced. The CNT semiconductor is intrinsic throughout and selected for the source and drain regions of metals with appropriate work functions. The whole process of importing doping is eliminated, and the source and drain regions are created only by applying two metals with different work functions. The drain metal work function is 1 eV lower and those of source, is 1 eV higher than the CNT work function. The simulation is performed in the ballistic regime by solving the Poisson and Schrodinger equations in a self-consistent way using the non-equilibrium Green's function method. The results show that the proposed structure widens the barrier on the drain-channel connection and consequently improves the band-to-band tunneling and the ambipolar behavior of the device. Also, the proposed structure reduces the OFF state current, increases the current ratio and decreases the subthreshold swing.
