This paper presents an efficient structure for carbon nanotube field-effect transistors (CNTFETs) with symmetric downward doping at drain and source regions. Simulation results show that by applying this type of doping, leakage current is improved and the device gets higher current ratios in comparison with conventional structure. This structure modifies the energy and potential profiles at drain/source to channel contact such that the carriers are more controllable to pass from source to drain region.Simulations have been done by the self-consistent solution of 2-D Poisson–Schrodinger equations, within the nonequilibrium Green’s function (NEGF) formalism. The proposed structure is a more efficient than conventional structure for digital applications
