In this paper, by channel engineering, a new structure of carbon nanotube field effect transistor with four haloes of impurity in the channel with two different dielectrics (FIH-SKH-CNTFET) is introduced. To study and simulate the proposed device characteristics the self-consistent solution of Poisson–Schrodinger equation within the non-equilibrium Green’s function (NEGF) method is used. Simulation results show that the proposed structure has lower subthreshold swing, lower Drain Induced Barrier Lowering (DIBL), better leakage current and higher current ratio in comparison with single kappa halo (SKH-CNTFET) and conventional (C-CNTFET) structures.
