Ali Naderi

Milad Ghanbarpour, Ali Naderi, Behzad Ghanbari, Saeed haghiri, Arash Ahmadi (2023) Digital Hardware Implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley Neuron Models With High Accuracy and Low Resources IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS: 70; 4447-4455

amir abdi, Ali Naderi (2022) A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region Materials Science and Engineering B-Advanced Functional Solid-State Materials: 283; 115839-...

Mahsa Salimi Mansouri, Ali Naderi, Behzad Ghanbari (2022) Implementation of Cardiac Purkinje Fiber Cells Model: High Speed and Low Cost Hardware AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 153; 154269

sasan khanjar, Ali Naderi (2021) DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells Materials Science and Engineering B-Advanced Functional Solid-State Materials: 272; 115386-...

Maryam Ghodrati, Ali Mir, Ali Naderi (2021) Proposal of a doping-less tunneling carbon nanotube field-effect transistor Materials Science and Engineering B-Advanced Functional Solid-State Materials: 265; 115016-...

Zahra Aghaeipour, Ali Naderi (2020) Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field Silicon: 12; 2611-2618

Maryam Ghodrati, Ali Mir, Ali Naderi (2020) New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 117; 153102

Saeed haghiri, Abdulhamid Zahedi, Ali Naderi, Arash Ahmadi (2018) Multiplierless Implementation of Noisy Izhikevich Neuron With Low-Cost Digital Design IEEE Transactions on Biomedical Circuits and Systems: 12; 1422-1430

Ali Naderi, Maryam Ghodrati (2018) An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region Turkish Journal of Electrical Engineering and Computer Sciences: 26; 2335 – 2346

Ali Naderi, fateme heirani (2018) A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 85;

Ali Naderi (2018) Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region INTERNATIONAL JOURNAL OF MODERN PHYSICS B: 31;

Ali Naderi, Maryam Ghodrati (2017) Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region European Physical Journal Plus: 132;

Ali Naderi, Behrooz Abdi Tahne (2017) and bending engineering in p-i-n gate all around Carbon nanotube feld effect transistors by multi-segment gate international journal of nano dimension: 8; 341-350

Ali Naderi, Behrooz Abdi Tahne (2016) Review—Methods in Improving the Performance of Carbon Nanotube Field Effect Transistors ECS Journal of Solid State Science and Technology: 12;

Ali Naderi (2016) Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region SUPERLATTICES AND MICROSTRUCTURES: 15;

Ali Naderi, Seyed Abolfazl Ahmadmiriz (2016) Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study ECS Journal of Solid State Science and Technology: 5;

Ali Naderi (2015) Theoretical analysis of a novel dual gate metal-graphene nanoribbon field effect transistor MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING: 31;

Ali Naderi (2014) Numerical Study of carbon nanotube field effect transistors in presence of carbon-carbon third nearest neighbor interactions INTERNATIONAL JOURNAL OF MODERN PHYSICS B: 28;