April 18, 2024
Ali Naderi

Ali Naderi

Academic rank: Associate professor
Address: Kermanshah university of technology, Imam Komeini BLVD, Kermanshah city
Education: Ph.D in Electrical-Electronic Engineering
Phone: 08338305008
Faculty: Faculty ofٍٍ Electrical Engineering

Courses

Associate
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Bachelor Of Science
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Master Of Science
PhD
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Research activities

Journal articles
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Milad Ghanbarpour, Ali Naderi, Behzad Ghanbari, Saeed haghiri, Arash Ahmadi (2023) Digital Hardware Implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley Neuron Models With High Accuracy and Low Resources IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS: 70; 4447-4455
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Milad Ghanbarpour, Ali Naderi, Saeed haghiri, Behzad Ghanbari, Arash Ahmadi (2023) Efficient Digital Realization of Endocrine Pancreatic β-Cells IEEE Transactions on Biomedical Circuits and Systems: 17; 246-256
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amir abdi, Ali Naderi (2022) A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region Materials Science and Engineering B-Advanced Functional Solid-State Materials: 283; 115839-...
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Elham Farahzad, Ali Naderi (2022) Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS: 33; 19971-19984
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Mahsa Salimi Mansouri, Ali Naderi, Behzad Ghanbari (2022) Implementation of Cardiac Purkinje Fiber Cells Model: High Speed and Low Cost Hardware AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 153; 154269
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Milad Ghanbarpour, Ali Naderi, Saeed haghiri, Arash Ahmadi (2021) An Efficient Digital Realization of Retinal Light Adaptation in Cone Photoreceptors IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS: 68; 5072-5080
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sasan khanjar, Ali Naderi (2021) DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells Materials Science and Engineering B-Advanced Functional Solid-State Materials: 272; 115386-...
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Ali Naderi, Hamed Mohammadi (2021) Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance European Physical Journal Plus: 136; 1-17
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Maryam Ghodrati, Ali Mir, Ali Naderi (2021) Proposal of a doping-less tunneling carbon nanotube field-effect transistor Materials Science and Engineering B-Advanced Functional Solid-State Materials: 265; 115016-...
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Saeed haghiri, Ali Naderi, Behzad Ghanbari, Arash Ahmadi (2021) High Speed and Low Digital Resources Implementation of Hodgkin-Huxley Neuronal Model Using Base-2 Functions IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS: 68; 275-287
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Behrooz Abdi Tahne, Ali Naderi, fateme heirani (2020) Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX Silicon: 12; 975-986
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Maryam Ghodrati, Ali Mir, Ali Naderi (2020) New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 117; 153102
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Ali Naderi, Maryam Ghodrati, Sobhi Baniardalani (2020) The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor Journal of Computational Electronics: 19; 283-290
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Saeed haghiri, Abdulhamid Zahedi, Ali Naderi, Arash Ahmadi (2018) Multiplierless Implementation of Noisy Izhikevich Neuron With Low-Cost Digital Design IEEE Transactions on Biomedical Circuits and Systems: 12; 1422-1430
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Ali Naderi, kamran moradi satari, fateme heirani (2018) SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING: 88; 57-64
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Ali Naderi, Maryam Ghodrati (2018) An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region Turkish Journal of Electrical Engineering and Computer Sciences: 26; 2335 – 2346
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Ali Naderi, fateme heirani (2018) A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 85;
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Ali Naderi, Maryam Ghodrati (2018) "Cut Off Frequency Variation by Ambient Heating in Tunneling p-i-n CNTFETs" ECS Journal of Solid State Science and Technology: 7;
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Hamed Mohammadi, Ali Naderi (2018) A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 83; 541-548
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Ali Naderi, fateme heirani (2017) Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics SUPERLATTICES AND MICROSTRUCTURES: 111; 1022-1033
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Ali Naderi, Behrooz Abdi Tahne (2017) and bending engineering in p-i-n gate all around Carbon nanotube feld effect transistors by multi-segment gate international journal of nano dimension: 8; 341-350
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Ali Naderi, Behrooz Abdi Tahne (2016) Review—Methods in Improving the Performance of Carbon Nanotube Field Effect Transistors ECS Journal of Solid State Science and Technology: 12;
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Behrooz Abdi Tahne, Ali Naderi (2016) SLD-MOSCNT: A new MOSCNT with step{linear doping pro_le in the source and drain regions INTERNATIONAL JOURNAL OF MODERN PHYSICS B: 30;
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Ali Naderi, Behrooz Abdi Tahne (2016) T-CNTFET with Gate-Drain Overlap and Two Different Gate Metals: A Novel Structure with Increased Saturation Current ECS Journal of Solid State Science and Technology: 5;
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Ali Naderi (2015) Theoretical analysis of a novel dual gate metal-graphene nanoribbon field effect transistor MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING: 31;
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Conference articles
Projects
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Theses
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Books
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Innovations
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Speeches
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