علی نادری

Milad Ghanbarpour, Ali Naderi, Behzad Ghanbari, Saeed haghiri, Arash Ahmadi (2023) Digital Hardware Implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley Neuron Models With High Accuracy and Low Resources IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS: 70; 4447-4455

amir abdi, Ali Naderi (2022) A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region Materials Science and Engineering B-Advanced Functional Solid-State Materials: 283; 115839-...

Mahsa Salimi Mansouri, Ali Naderi, Behzad Ghanbari (2022) Implementation of Cardiac Purkinje Fiber Cells Model: High Speed and Low Cost Hardware AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 153; 154269

sasan khanjar, Ali Naderi (2021) DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells Materials Science and Engineering B-Advanced Functional Solid-State Materials: 272; 115386-...

Maryam Ghodrati, Ali Mir, Ali Naderi (2021) Proposal of a doping-less tunneling carbon nanotube field-effect transistor Materials Science and Engineering B-Advanced Functional Solid-State Materials: 265; 115016-...

Zahra Aghaeipour, Ali Naderi (2020) Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field Silicon: 12; 2611-2618

Maryam Ghodrati, Ali Mir, Ali Naderi (2020) New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 117; 153102

Ali Naderi, kamran moradi satari, fateme heirani (2018) SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING: 88; 57-64

Ali Naderi, Maryam Ghodrati (2018) "Cut Off Frequency Variation by Ambient Heating in Tunneling p-i-n CNTFETs" ECS Journal of Solid State Science and Technology: 7;

Hamed Mohammadi, Ali Naderi (2018) A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS: 83; 541-548

Ali Naderi, fateme heirani (2017) Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics SUPERLATTICES AND MICROSTRUCTURES: 111; 1022-1033

Ali Naderi (2016) Higher Current Ratio and Improved Ambipolar Behavior in Graphene Nanoribbon Field Effect Transistors by Symmetric Pocket Doping Profile ECS Journal of Solid State Science and Technology: 12;

Behrooz Abdi Tahne, Ali Naderi (2016) SLD-MOSCNT: A new MOSCNT with step{linear doping pro_le in the source and drain regions INTERNATIONAL JOURNAL OF MODERN PHYSICS B: 30;

Ali Naderi, Behrooz Abdi Tahne (2016) T-CNTFET with Gate-Drain Overlap and Two Different Gate Metals: A Novel Structure with Increased Saturation Current ECS Journal of Solid State Science and Technology: 5;

Ali Naderi (2016) Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region SUPERLATTICES AND MICROSTRUCTURES: 89;

Ali Naderi, Parviz Keshavarzi (2014) Electrically activated source extension grapheme nanoribbon field effect transistor : noval attributes and design considerations for suppressing short channel effects SUPERLATTICES AND MICROSTRUCTURES: 72;