The MOS-like carbon nanotube field-effect transistors (MOSCNTFET) suffer from band to band tunneling, especially in negative gate voltages. Many structures have been presented to improve the behavior of MOSCNTFET such as structure with linear doping at source and drain regions (LD- MOSCNT), MOSCNT with lightly doped drain and source (LDDS- MOSCNT) and MOSCNT with double light doping concentrations in the source and drain region (DLD-MOSCNT). These structures still suffer from band to band tunneling in negative gate voltages. In this article, for MOSCNT, a structure is suggested that can improve the electrical characteristics. In the proposed structure, the source and drain regions are divided into three equal parts: the first part situated in source and drain contacts is heavily doped; the second part has a light doping concentration, and the third part located between the second and the third part, has a linear doping. This new structure is called LDDS-LD-MOSCNT. Electrical characteristics of the proposed structure are compared with LDDS-MOSCNT, DLD-MOSCNT and common MOSCNT structures in a wide range of channel length. The results of this comparison show that the proposed structure has a better leakage and switching behavior.
