Name fateme heirani Affiliation دانشجوی دانشگاه صنعتی کرمانشاه Degree _ Website Email heiranif [at] yahoo [dot] com JournalPaper Presentation Book Thesis FinishedProject Speech GrantAttraction TheorizingChair Publication Innovation ResearchExcellence TitleJournal 1 Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX Silicon 2 SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 3 A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS 4 Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics SUPERLATTICES AND MICROSTRUCTURES