مشخصات پژوهش

عنوان	Investigation of phonon dispersion spectrum and electron energy loss spectrum of monolayer silicon carbide
نوع پژوهش	ارائه مقاله در کنفرانس‌های علمی
کلیدواژه‌ها	Density functional theory, Electronic properties, Optical properties, silicon carbide
چکیده	In this article, the electro-optical properties and dynamical stability of monolayer silicon carbide are investigated using density functional theory. The calculated electronic band structure show that the silicon carbide sheet is a semiconductor with a direct band gap of 2.53 eV at the K point. There is no negative frequency in the calculated phonon spectrum which shows that the monolayer silicon carbide sheet is dynamically stable. For light polarized along the x-axis, a strong peak at 3.28 eV is observed which is significantly due to the transition between the valence band maximum and conduction band minimum. Also, there are several peaks between 6 and 10 eV. The monolayer silicon carbide absorbs the photons at the visible light range.
پژوهشگران	سمیه بهزاد (نفر اول)، پریا تابشی پور (نفر دوم)