سمیه بهزاد

In this article, the electro-optical properties and dynamical stability of monolayer silicon carbide are investigated using density functional theory. The calculated electronic band structure show that the silicon carbide sheet is a semiconductor with a direct band gap of 2.53 eV at the K point. There is no negative frequency in the calculated phonon spectrum which shows that the monolayer silicon carbide sheet is dynamically stable. For light polarized along the x-axis, a strong peak at 3.28 eV is observed which is significantly due to the transition between the valence band maximum and conduction band minimum. Also, there are several peaks between 6 and 10 eV. The monolayer silicon carbide absorbs the photons at the visible light range.