A new structure with a Gaussian doping distribution along the channel region is proposed to improve the performance of
tunneling carbon nanotube field-effect transistors (T-CNTFETs). The new structure involves a Gaussian doping distribution
in the channel region with a low level of doping at the sides that gradually increases towards the middle of the channel. The
source doping is p-type, while the doping in the drain and channel regions is n-type. The doping distribution is uniform
in the drain/source regions. To simulate the behavior of T-CNTFETs, the Poisson and Schrödinger equations are solved
self-consistently using the nonequilibrium Green’s function formalism. The simulation results show that the proposed
structure exhibits increased saturation current but decreased OFF-state current compared with the conventional structure
(C-T-CNTFET), yielding a ~ 104 times higher current ratio for a gate length of 20 nm. The proposed structure also shows
improvements in parameters such as the transconductance, gate capacitance, cutoff frequency, and delay compared with the
conventional structure and can be considered to be a more appropriate option for different applications.