09 فروردین 1403
علي نادري

علی نادری

مرتبه علمی: دانشیار
نشانی: کرمانشاه، بزرگراه امام خمینی، دانشگاه صنعتی کرمانشاه
تحصیلات: دکترای تخصصی / مهندسی برق- الکترونیک
تلفن: 08338305008
دانشکده: دانشکده مهندسی برق

مشخصات پژوهش

عنوان
Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region
نوع پژوهش مقاله چاپ شده
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پژوهشگران علی نادری (نفر اول)

چکیده

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and investigated using quantum simulation with a nonequilibrium Green's function (NEGF) method. Tunneling leakage current and ambipolar conduction are known effects for MOSFET-like GNRFETs. To minimize these issues a novel structure with a simple change of the GNRFETs by using single halo pocket in the intrinsic channel region, “Single Halo GNRFET (SH-GNRFET)”, is proposed. An appropriate halo pocket at source side of channel is used to modify potential distribution of the gate region and weaken band to band tunneling (BTBT). In devices with materials like Si in channel region, doping type of halo and source/drain regions are different. But, here, due to the smaller bandgap of graphene, the mentioned doping types should be the same to reduce BTBT. Simulations have shown that in comparison with conventional GNRFET (C-GNRFET), an SH-GNRFET with appropriately halo doping results in a larger ON current (Ion), smaller OFF current (Ioff), a larger ON–OFF current ratio (Ion/Ioff), superior ambipolar characteristics, a reduced power–delay product and lower delay time.