In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with
high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown
voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity
than the other parts to reduce its resistance and increase the driving current as low-resistance box. An
oxide box is implemented at the upper part of the channel from the drain region toward the middle of the
channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and
improves the RF performance of the device because of its higher tolerable electric field and modification in
gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device
which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11%
improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral
power gain, maximum available gain, maximum stable gain, and maximum output power density are
improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET
can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage
and high-frequency applications.