05 تیر 1403
عبدالحميد زاهدي

عبدالحمید زاهدی

مرتبه علمی: استادیار
نشانی: دانشگاه صنعتی کرمانشاه، دانشکده مهندسی برق، گروه مهندسی برق (گرایش های الکترونیک و مخابرات)
تحصیلات: دکترای تخصصی / مهندسی برق مخابرات سیستم
تلفن:
دانشکده: دانشکده مهندسی برق

مشخصات پژوهش

عنوان
High Efficiency and High Output Power HFET GaN Doherty Power Amplifier with Linearity Region Extension for Wireless Applications
نوع پژوهش مقاله چاپ شده
کلیدواژه‌ها
High Output Power; HFET GaN; Doherty Power Amplifier;class-AB; class-C
پژوهشگران آزاده نوروزی کنگرشاهی (نفر اول)، عبدالحمید زاهدی (نفر دوم)

چکیده

High efficiency and high gain Doherty power amplifier (DPA) with high output power is proposed in this paper for wireless mobile applications in the UHF band. The proposed structure consists of two conventional power amplifiers, class-AB as the carrier amplifier and class-C as the auxiliary amplifier. Two similar transistors of HFET GaN technology and λ/4 micro-strip lines to model the inductors and input/output matching networks are employed as the main elements of the proposed structure. Past matching network and optimal power divider are also used to obtain high improvements in the suggested DPA. Using the proposed structure, return loss reduction, efficiency and gain increasing and bandwidth property improvement have been achieved compared to other efficient works in this filed. The proposed DPA has 50–67.3% drain efficiency at the frequency of 2 GHz, high gain as 18.1 dB, saturation output power as 46.91 dBm and output power at P-1 dB point as 43.37 dBm.